Transmission electron microscopy study of room temperature lasing epitaxial ZnO films on sapphire

被引:0
|
作者
Wang, N [1 ]
Fung, KK [1 ]
Yu, P [1 ]
Tang, ZK [1 ]
Wong, GKL [1 ]
Kawasaki, M [1 ]
Ohtomo, A [1 ]
Koinuma, H [1 ]
Segawa, Y [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong
来源
NITRIDE SEMICONDUCTORS | 1998年 / 482卷
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied the microstructures of lasing and non-lasing ZnO films on sapphire in plan-view and cross-section by transmission electron microscopy(TEM). While ZnO films in general are made up of cloumnar close-packed c-axis misoriented nanocrystals, the misorientation in nonlasing film, typically 5(0), is considerably larger than lasing film, typically less than 1(0). A rather high density of pinholes or nanotubes is associated with the highly misoriented films. The misorientation between adjacent grains is taken up by grain boundary dislocations. Room temperature lasing films contain a high density of threading boundary edge dislocations, in excess of 10(10) cm(-2). But faceting in the columnar nanocrystals is not well developed so that the grain boundaries are not clearly visible. Tilting of (0001) lattice planes between grains originating from substrate surface step and growth fault step, however, has been observed in high resolution electron microscopy (HREM) images.
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页码:423 / 428
页数:6
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