Autocorrelation spectroscopy on single GaInAs/GaAs quantum wells

被引：0
作者：
Neuberth, U
von Freymann, G
Wegener, M
Nau, S
Stolz, W
机构：
[1] Univ Karlsruhe TH, Inst Angew Phys, D-76131 Karlsruhe, Germany
[2] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany
[3] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 238卷 / 03期
关键词：
D O I：
10.1002/pssb.200303169
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate an atomically rough single GalnAs/GaAs quantum well by means of autocorrelation spectroscopy. The data are based on thousands of individual low-temperature nano-photoluminescence spectra and exhibit a peak around 1.8meV energy difference. On the same sample, we measure the topography of one of the buried heterointerfaces which is possible by using highly-selective etching and atomic force microscopy. (C) 2003 WILEY-VCH Vulag GmbH & Co. KGaA, Weinheim.
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页码：498 / 501
页数：4
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