Radiation-produced defects in n-GaN

被引：6

作者：

Emtsev, V. V. ^{[1
]}

Davydov, V. Yu. ^{[1
]}

Kozlovskii, V. V. ^{[2
]}

Oganesyan, G. A. ^{[1
]}

Poloskin, D. S. ^{[1
]}

Smirnov, A. N. ^{[1
]}

Tropp, E. A. ^{[1
]}

Morozov, Yu. G. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] St Petersburg Tech State Univ, St Petersburg 195251, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

基金：

俄罗斯基础研究基金会;

关键词：

gallium nitride; irradiation; radiation-produced defects;

D O I：

10.1016/j.physb.2007.08.176

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Radiation-produced defects in doped and nominally undoped n-GaN with charge carrier concentrations in a range of 4 x 10(16) cm(-3) to about 2 x 10(18) cm(-3) are investigated. Layers of n-GaN are irradiated with fast electrons at 0.9 MeV, Co-60 gamma rays and protons at 150keV. The production rates of radiation defects in n-GaN are estimated and compared with literature data. Annealing processes of radiation defects in n-GaN in the temperature range 100-700 degrees C are also discussed. The annealing behavior appears to be complicated. Two temperature intervals, from T = 100 to 400 degrees C and from T = 500 to 700 degrees C, are characteristic for modification and annealing processes of radiation-produced defects in n-GaN. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：315 / 318

页数：4

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