Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

被引：15
作者：
Bejenari, Igor [1 ,2 ]
Schroeter, Michael [1 ,3 ]
Claus, Martin [1 ,4 ]
机构：
[1] Tech Univ Dresden, Chair Electron Devices & Integrated Circuits, Dept Elect & Comp Engn, D-01062 Dresden, Germany
[2] Moldavian Acad Sci, Inst Elect Engn & Nanotechnol, MD-2028 Kishinev, Moldova
[3] Univ Calif San Diego, Dept Elect & Commun Engn, La Jolla, CA 92093 USA
[4] Tech Univ Dresden, Ctr Adv Elect Dresden, D-01062 Dresden, Germany
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 09期
关键词：
Analytical transport model; carbon nanotube FET (CNTFET); Schottky barrier (SB); tunneling; Wentzel-Kramers-Brillouin (WKB) approximation; FIELD-EFFECT TRANSISTORS; CARBON-NANOTUBE FETS; VIRTUAL-SOURCE MODEL; INCLUDING NONIDEALITIES; COMPACT MODEL; PART II; GATE; PERFORMANCE; TRANSPORT; DESIGN;
D O I：
10.1109/TED.2017.2721540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new analytical model based on the Wentzel-Kramers-Brillouin approximation for MOSFET-like 1-D ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreementwith the experimental data for sub10-nm carbon-nanotube FETs.
引用
收藏
页码：3904 / 3911
页数：8
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