We report electrical and magnetoresistive properties of Ag point-probe contacts formed by attaching the bent Ag wire (empty set = 0.25 mm) to the top of the La2/3Sr1/3MnO3 (LSMO) thin film magnetron sputtered at 800 degrees C on MgO(100) single crystal substrates. Significant contact magnetoresistance values (up to 13% at T = 295 K and mu H-0 = 0.73 T) have been measured for the Ag/LSMO junctions by applying a 3 point-probe method. The origin of both temperature-dependent resistance and magnetoresistance of the Ag/LSMO contacts has been explained taking into account the dominating role of spreading resistance. It was found that keeping of the films in air for 1 month as well as ultrathin overlayers (d similar to 3-5 nm) of the highly resistive multiferroic BiFeO3 magnetron sputtered onto the manganite film resulted in a significant increase of contact resistance and reduced magnetoresistance values.
机构:
Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center,School of Physics, Nanjing UniversityCollaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center,School of Physics, Nanjing University
周国泰
高凯歌
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机构:
Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center,School of Physics, Nanjing UniversityCollaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center,School of Physics, Nanjing University