Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping

被引：69

作者：

Dadgar, Armin ^{[1
]}

Blaesing, Juergen ^{[1
]}

Diez, Annette ^{[1
]}

Krost, Alois ^{[1
]}

机构：

[1] Otto von Guericke Univ, Inst Expt Phys, Fak Nat Wissensch, D-39106 Magdeburg, Germany

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 01期

关键词：

CHEMICAL-VAPOR-DEPOSITION; PHASE EPITAXY; THIN-FILMS; STRAIN;

D O I：

10.1143/APEX.4.011001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN based epitaxy on silicon usually requires strain-engineering methods to avoid tensile stress after cooling from growth temperature. Silicon doping of GaN induces additional tensile stress during growth originating from edge dislocation climb. Especially in the GaN-on-Si case high tensile stresses for highly Si-doped layers limit the freedom in device design and performance. We show that germanium doping does not influence strain evolution and enables the growth of thick highly n-type doped crack-free layers on silicon. It is concluded that dislocation climb in the case of silicon doping does not originate from surface roughening but from silicon-nitride induced dislocation masking. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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