Ta3N5 photoanodes for water splitting prepared by sputtering

被引：129

作者：

Yokoyama, Daisuke ^{[1
]}

Hashiguchi, Hiroshi ^{[1
]}

Maeda, Kazuhiko ^{[1
]}

Minegishi, Tsutomu ^{[1
]}

Takata, Tsuyoshi ^{[1
]}

Abe, Ryu ^{[2
]}

Kubota, Jun ^{[1
]}

Domen, Kazunari ^{[1
]}

机构：

[1] Univ Tokyo, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Hokkaido Univ, Catalysis Res Ctr, Sapporo, Hokkaido 0010021, Japan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 07期

关键词：

Nitride; Photoanode; Water splitting; Sputtering; Surface modification; VISIBLE-LIGHT IRRADIATION; IRIDIUM OXIDE-FILMS; PHOTOELECTROCHEMICAL PROPERTIES; HYDROGEN-PRODUCTION; PHOTOCATALYST; OXIDATION; NM; OXYNITRIDE; EVOLUTION; ELECTRODE;

D O I：

10.1016/j.tsf.2010.10.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ta3N5 thin-film photoelectrodes were prepared using a reactive sputtering technique, and their properties for photoelectrochemical water splitting under visible light were investigated. The crystal phases of the films were dependent on the sputtering conditions, such as the N-2/O-2 ratio of the sputtering atmosphere and the substrate temperature (T-s). Single-phase Ta3N5 films were obtained by sputtering at N-2/O-2 = 30 and T-s = 1013 K with post-annealing in an NH3 flow. The Ta3N5 photoelectrodes had an anodic photoresponse in water photoelectrolysis, although the photocurrent rapidly decreased because of self-oxidation of the photoanode by photogenerated holes. However, modification of the NH3-treated Ta3N5 films with IrO2 promoted the oxidation of water and suppressed the self-oxidation of Ta3N5. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2087 / 2092

页数：6

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