Saturation of multiplication mechanism in silicon avalanche photodiodes used for single electron detection

被引：4

作者：

Osakabe, N ^{[1
]}

Endo, J

Tonomura, A

Urakami, T

Ohsuka, S

Tsuchiya, H

Tsuchiya, Y

Kodama, T

机构：

[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan

[2] Hamamatsu Photon KK, Cent Res Lab, Hamakita 4348601, Japan

[3] Nagoya Univ, Sch Engn, Dept Elect & Informat, Nagoya, Aichi 4648603, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1998年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.1149030

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have examined the multiplication factor of silicon avalanche photodiodes designed for fast timing detection of monoenergetic electrons. The multiplication mechanism was found to be saturated. The highly concentrated space charge generated by a primary electron causes the saturation. This wa's confirmed by a Monte Carlo simulation of electron trajectories in silicon and an experiment exploiting a subpicosecond laser pulse with a variable illuminating spot size to simulate an electron bombardment. (C) 1998 American Institute of Physics.

引用

页码：2898 / 2901

页数：4

共 15 条

[1]

[Anonymous], SEMICONDUCTORS SEMIM

[2]

[Anonymous], NATURE LONDON

[3] REVIEW OF THE HYBRID PHOTO DIODE TUBE (HPD) AN ADVANCED LIGHT DETECTOR FOR PHYSICS [J].

ANZIVINO, G ;

ARNAUDON, H ;

BAILLON, P ;

BENETTI, P ;

BOSKMA, L ;

BURGER, P ;

CONTIN, A ;

DESALVO, R ;

GORODETZKY, P ;

GRASSI, D ;

HAO, W ;

HE, H ;

LIU, L ;

LUNDIN, M ;

MONDARDINI, MR ;

PAOLUCCI, S ;

ROSSELLA, M ;

SANTIARD, JC ;

SCHOMAKER, R ;

YOU, K ;

WANG, K ;

WANG, Y ;

XIA, X ;

XU, C ;

YANG, C ;

ZHAO, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 365 (01) :76-82

[4] CHARACTERIZATION OF SILICON AVALANCHE PHOTODIODES FOR PHOTON-CORRELATION MEASUREMENTS .1. PASSIVE QUENCHING [J].

BROWN, RGW ;

RIDLEY, KD ;

RARITY, JG .

APPLIED OPTICS, 1986, 25 (22) :4122-4126

[5] A PHOTOMULTIPLIER TUBE INCORPORATING AN AVALANCHE PHOTODIODE [J].

CUSHMAN, P ;

RUSACK, R .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 333 (2-3) :381-390

[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[7] NUMERICAL-SIMULATION OF THE NONLINEAR RESPONSE OF A P-I-N PHOTODIODE UNDER HIGH ILLUMINATION [J].

DENTAN, M ;

DECREMOUX, B .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (08) :1137-1144

[8]

Knoll G. F., 1989, RAD DETECTION MEASUR

[9] Feasibility of observing two-electron interference [J].

Kodama, T ;

Osakabe, N ;

Endo, J ;

Tonomura, A ;

Ohbayashi, K ;

Uchikawa, Y .

PHYSICAL REVIEW A, 1998, 57 (04) :2781-2785

[10]

Newbury DE., 1986, PRINCIPLES ANAL ELEC, P1, DOI [10.1007/978-1-4899-2037-9_1, DOI 10.1007/978-1-4899-2037-9_1]

← 1 2 →