Indium incorporation coefficients in the growth of AlInGaAs/Al0.3Ga0.7As quantum wells by molecular beam epitaxy

被引：1

作者：

Chua, SJ

Zhang, ZH

机构：

[1] Natl Univ Singapore, Ctr Optoelect, Dept Elect Engn, Singapore 119260, Singapore

[2] Inst Mat Res & Engn, Singapore 119260, Singapore

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 6A期

关键词：

incorporation coefficient; ALInGaAs; quantum well; MBE; TEM;

D O I：

10.1143/JJAP.37.3280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the emission wavelength and well thickness data of AlInGaAs/Al0.3Ga0.7As quantum wells obtained from room temperature photoluminescence and transmission electron microscopy, indium incorporation coefficients are determined for the growth of the quantum wells by molecular beam epitaxy (MBE). At a growth temperature of 600 degrees C, the indium incorporation coefficient is found to be 0.54.

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收藏

页码：3280 / 3281

页数：2

相关论文

共 20 条

[1]

CASEY, 1978, HETEROSTRUCTURE LA A, P193

[2] A PHOTOLUMINESCENCE STUDY OF INDIUM DESORPTION FROM STRAINED GA1-XINXAS/GAAS [J].

EMENY, MT ;

HOWARD, LK ;

HOMEWOOD, KP ;

LAMBKIN, JD ;

WHITEHOUSE, CR .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :413-418

[3] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].

FISCHER, R ;

KLEM, J ;

DRUMMOND, TJ ;

THORNE, RE ;

KOPP, W ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510

[4] HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS [J].

KRIJN, MPCM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :27-31

[5]

MAURISON R, 1993, P SOC PHOTO-OPT INS, V1850, P203

[6] REDUCED INDIUM INCORPORATION DURING THE MBE GROWTH OF IN(AL,GA)AS [J].

MCELHINNEY, M ;

STANLEY, CR .

ELECTRONICS LETTERS, 1993, 29 (14) :1302-1304

[7] STRAINED ALGAINAS/ALGAAS QUANTUM-WELLS AND QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

OKEEFE, SS ;

SCHAFF, WJ ;

EASTMAN, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (07) :738-740

[8]

PHILIPS, DCD 3 DOUBL CRYST DI, pB1

[9] INDIUM DESORPTION FROM STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

RADHAKRISHNAN, K ;

YOON, SF ;

GOPALAKRISHNAN, R ;

TAN, KL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :1124-1128

[10] INDIUM DESORPTION DURING MBE GROWTH OF STRAINED INGAAS LAYERS [J].

REITHMAIER, JP ;

RIECHERT, H ;

SCHLOTTERER, H ;

WEIMANN, G .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :407-412