Study of a 0.35 THz Extended Interaction Oscillator Driven by a Pseudospark-Sourced Sheet Electron Beam

被引：27

作者：

Xie, Jie ^{[1
,2
]}

Zhang, Liang ^{[2
]}

Yin, Huabi ^{[2
]}

He, Wenlong ^{[3
]}

Ronald, Kevin ^{[2
]}

Phelps, A. D. R. ^{[2
]}

Chen, Xiaodong ^{[4
]}

Zhang, Jin ^{[4
]}

Alfadhl, Yasir ^{[4
]}

Yuan, Xuesong ^{[1
]}

Meng, Lin ^{[1
]}

Cross, Adrian W. ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Vacuum Elect Natl Lab, Chengdu 610054, Peoples R China

[2] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[3] Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China

[4] Queen Marry Univ London, Sch Elect Engn & Comp Sci, London E1 4NS, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 02期

基金：

中国国家自然科学基金; 英国工程与自然科学研究理事会;

关键词：

Extended interaction oscillator (EIO); high power radiation; pseudospark-sourced (PS-sourced) electron beam; sheet electron beam (SEB); terahertz; W-BAND; CHERENKOV INTERACTION; POST-ACCELERATION;

D O I：

10.1109/TED.2019.2957760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact high-power extended interaction oscillator (EIO) driven by a pseudospark-sourced (PS-sourced) sheet electron beam (SEB) is presented at 0.35 THz. It combines the advantages of a planar interaction circuit and a SEB generated from the PS discharge, including a large beam cross-section, high gain per unit length, and high current density with the additional benefit of not requiring an external focusing magnetic field. Staying within what is achievable with microfabrication techniques, the influence of tolerance on the Q value, resonance frequency, and characteristic impedance was investigated. The effect of surface roughness caused by the manufacturing method on Ohmic loss of the material surface was studied. The advanced microfabrication techniques of Ultra Violet Lithographie, Galvanik, and Abformung (UV-LIGA) and Nano-computer numerical control (Nano-CNC), which are capable of realizing high precision and a metal surface of sufficient smoothness, were proposed to manufacture the planar structures. The effect of plasma density in PS-sourced SEB on the resonance frequency of the EIO circuit was investigated. The simulation results showed that the output signal had a slight frequency upshift and a decrease of the output power as the plasma density increased at 0.35 THz, which is consistent with the theoretical analysis. Beam-wave interaction simulations for this planar EIO predicted a peak output power of 1.8 kW at 0.35 THz using an effective value of conductivity of S/m to take into account the skin depth and surface roughness.

引用

页码：652 / 658

页数：7

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