共 27 条
- [24] Silicon carbide for high-temperature microelectronics: Recent advances in material growth via gas source MBE and device research [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 240 - 247
- [25] A review of recent MOSFET source and drain resistances extraction methods using a single test device [J]. 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
- [27] Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet Overview and analysis of unique properties for converter protection and possible future safety management [J]. 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRICAL SYSTEMS FOR AIRCRAFT, RAILWAY, SHIP PROPULSION AND ROAD VEHICLES & INTERNATIONAL TRANSPORTATION ELECTRIFICATION CONFERENCE (ESARS-ITEC), 2018,