Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials

被引：131
作者：
Donetsky, Dmitry [1 ]
Belenky, Gregory [1 ,3 ]
Svensson, Stefan [2 ]
Suchalkin, Sergei [1 ,3 ]
机构：
[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
[3] Power Photon Corp, Stony Brook, NY 11790 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期
关键词：
RECOMBINATION RATES; PHOTODETECTORS; GAP;
D O I：
10.1063/1.3476352
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Minority carrier lifetime, tau, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg(0.78)Cd(0.22)Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured tau values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 mu s for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3476352]
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页数：3
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共 22 条
  • [1] Abakumov V. N., 1991, Nonradiative Recombination in Semiconductors
  • [2] Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe
    Chang, Y.
    Grein, C. H.
    Zhao, J.
    Becker, C. R.
    Flatte, M. E.
    Liao, P.-K.
    Aqariden, F.
    Sivananthan, S.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (19)
  • [3] Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
    Donetsky, Dmitry
    Svensson, Stefan P.
    Vorobjev, Leonid E.
    Belenky, Gregory
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (21)
  • [4] LATTICE-DYNAMICS OF GASB
    FARR, MK
    TRAYLOR, JG
    SINHA, SK
    [J]. PHYSICAL REVIEW B, 1975, 11 (04): : 1587 - 1594
  • [5] Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices
    Flatté, ME
    Grein, CH
    Hasenberg, TC
    Anson, SA
    Jang, DJ
    Olesberg, JT
    Boggess, TF
    [J]. PHYSICAL REVIEW B, 1999, 59 (08): : 5745 - 5750
  • [6] Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes
    Gopal, V.
    Plis, E.
    Rodriguez, J. -B.
    Jones, C. E.
    Faraone, L.
    Krishna, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
  • [7] Short-period InAs/GaSb superlattices for mid-infrared photodetectors
    Haugan, H. J.
    Szmulowicz, F.
    Brown, G. J.
    Ullrich, B.
    Munshi, S. R.
    Wickett, J. C.
    Stokes, D. W.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1702 - +
  • [8] Growth of short-period InAs/GaSb superlattices
    Haugan, H. J.
    Mahalingam, K.
    Brown, G. J.
    Mitchel, W. C.
    Ullrich, B.
    Grazulis, L.
    Elhamri, S.
    Wickett, J. C.
    Stokes, D. W.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)
  • [9] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
    HENRY, CH
    LANG, DV
    [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
  • [10] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES
    HUANG, K
    RHYS, A
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078): : 406 - 423
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