Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials

被引：133

作者：

Donetsky, Dmitry ^{[1
]}

Belenky, Gregory ^{[1
,3
]}

Svensson, Stefan ^{[2
]}

Suchalkin, Sergei ^{[1
,3
]}

机构：

[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] Power Photon Corp, Stony Brook, NY 11790 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

关键词：

RECOMBINATION RATES; PHOTODETECTORS; GAP;

D O I：

10.1063/1.3476352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Minority carrier lifetime, tau, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg(0.78)Cd(0.22)Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured tau values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 mu s for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3476352]

引用

页数：3

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