Ion-beam induced magnetic anisotropies in iron films

被引：29

作者：

Neubauer, M

Reinecke, N

Uhrmacher, M

Lieb, KP

Munzenberg, M

Felsch, W

机构：

[1] Univ Gottingen, Inst Phys 2, D-37073 Gottingen, Germany

[2] Univ Gottingen, Inst Phys 1, D-37073 Gottingen, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 139卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(97)00968-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

100-300 nm thin Fe layers evaporated onto crystalline and amorphous Si or SiO(2) substrates were irradiated, at 77 K, with 10(14)-10(16) Xe(+)-ions/cm(2) at 450 keV beam energy. The magnetizations in the films were measured by means of Perturbed Angular Correlation (PAC) spectroscopy with implanted (111)In tracer ions, or the Magneto-Optic Kerr Effect (MOKE). Upon ion implantation, dramatic changes of the magnetic anisotropy were observed which are attributed to ion-beam enhanced lateral grain growth. Very little influence of the deposition parameters (type and cristallinity of substrate, evaporation rate) on the anisotropic magnetization was found. (C) 1998 Elsevier Science B.V.

引用

页码：332 / 337

页数：6

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