Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

被引：21
|
作者：
Leparoux, S. [1 ]
Diot, C. [1 ]
Dubach, A. [1 ]
Vaucher, S. [1 ]
机构：
[1] Dept Mat Technol, CH-3602 Thun, Switzerland
来源：
SCRIPTA MATERIALIA | 2007年 / 57卷 / 07期
关键词：
diamond; silicon carbide; heteroepitaxy; crystallization; microwave;
D O I：
10.1016/j.scriptamat.2007.06.016
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
When a powder mixture of diamond and silicon is heated by microwaves, heteroepitaxial growth of SiC is observed on the (111) as well as on the (100) faces of the diamond. The SiC over-layer was characterized by X-ray diffraction and scanning electron microscopy. High-resolution scanning electron microscopy shows the presence of triangular silicon carbide on the (111) faces of diamond while prismatic crystals are found on the (100) faces. The crystal growth seems to be favored in the plane parallel to the face (111). (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：595 / 597
页数：3
相关论文
共 50 条
  • [1] Silicon Carbide Coating on Diamond Powder by Rotary Chemical Vapor Deposition
    Katsui, Hirokazu
    He, Zhenhua
    Goto, Takashi
    MATERIALS INTEGRATION, 2012, 508 : 65 - 68
  • [2] Synthesis and properties of diamond - silicon carbide composite layers
    Taylor, A.
    Klimsa, L.
    Kopecek, J.
    Remes, Z.
    Vronka, M.
    Ctvrtlik, R.
    Tomastik, J.
    Mortet, V
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 800 : 327 - 333
  • [3] Consolidation of Diamond Composites Using Silicon Carbide-Coated Diamond Powder
    Kitiwan, Mettaya
    Katsui, Hirokazu
    Goto, Takashi
    SCIENCE OF ADVANCED MATERIALS, 2017, 9 (07) : 1093 - 1098
  • [4] Strength of diamond - silicon carbide interfaces in silicon carbide bonded diamond materials containing graphitic interlayers
    Yousefi, P.
    Matthey, B.
    Fontanot, T.
    Herre, P.
    Hoehn, S.
    Kunze, S.
    Christiansen, S. H.
    Herrmann, M.
    OPEN CERAMICS, 2022, 11
  • [5] Micro-cantilever testing of diamond - silicon carbide interfaces in silicon carbide bonded diamond materials produced by reactive silicon infiltration
    Ast, J.
    Matthey, B.
    Herre, P.
    Hoehn, S.
    Herrmann, M.
    Christiansen, S. H.
    OPEN CERAMICS, 2021, 8
  • [6] The effect of diamond powder characteristics on lapping of sintered silicon carbide
    Rosczyk, Benjamin
    Titov, Artem
    Burkam, Eric
    Onyenemezu, Clement
    Benea, Ion C.
    OPTIFAB 2015, 2015, 9633
  • [7] FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS
    CHALKER, PR
    JOHNSTON, C
    ROMANI, S
    AYRES, CF
    BUCKLEYGOLDER, IM
    KROTZ, G
    ANGERER, H
    MULLER, G
    VEPREK, S
    KUNSTMANN, T
    LEGNER, W
    SMITH, LM
    LEESE, AB
    JONES, AC
    RUSHWORTH, SA
    DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 632 - 636
  • [8] AlN films grown on diamond and silicon carbide
    Gorodetsky, AE
    Zalavutdinov, RK
    Zakharov, AP
    Hsu, WL
    Spitsyn, BV
    Bouilov, LL
    Stoyan, VP
    DIAMOND AND RELATED MATERIALS, 1999, 8 (07) : 1267 - 1271
  • [9] Multilayer diamond coatings on silicon carbide
    Fan, WD
    Jagannadham, K
    Goral, BC
    SURFACE & COATINGS TECHNOLOGY, 1996, 81 (2-3) : 172 - 182
  • [10] Deposition of heteroepitaxial diamond films on 2 in silicon substrates
    Jiang, X
    Paul, M
    Klages, CP
    DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 251 - 255
12345