Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors

被引：8

作者：

Estrada, M. ^{[1
]}

Gutierrez-Heredia, G. ^{[4
]}

Cerdeira, A. ^{[1
]}

Alvarado, J. ^{[2
]}

Garduno, I. ^{[2
]}

Tinoco, J. ^{[3
]}

Mejia, I. ^{[4
]}

Quevedo-Lopez, M. ^{[4
]}

机构：

[1] CINVESTAV, IPN, SEES, Dept Ingn Elect, Mexico City 07360, DF, Mexico

[2] Benemerita Univ Autonoma Puebla, CIDS, Inst Ciencias, Puebla 72570, Mexico

[3] Univ Veracruzana, Micro & Nanotechnol Res Ctr MICRONA, Boca Del Rio 94294, Veracruz, Mexico

[4] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

THIN SOLID FILMS | 2014年 / 573卷

基金：

美国国家科学基金会;

关键词：

Zinc oxide; Thin film transistors; Temperature; Low-temperature processing; Pulse laser deposition;

D O I：

10.1016/j.tsf.2014.10.092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impact on the electrical behavior of thin film transistors, TFTs, based on zinc oxide, ZnO-based TFTs, with temperature is analyzed. ZnO is deposited using pulsed laser deposition techniques and the temperature used during the entire fabrication process is kept below 100 degrees C. Up to 330 K, the transfer curves practically remain constant or slightly shifted toward more positive voltages. For temperatures up to 330 K, they show the combined effect of the threshold voltage shifting toward more negative voltages and the increase of series resistance. The drain current shows an Arrhenius-type dependence with temperature in subthreshold regime with activation energy of around 0.53 eV. In above threshold regime, for temperatures above 330 K, the activation energy is around 0.15 eV. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：18 / 21

页数：4

共 17 条

[1] ZNO FIELD-EFFECT TRANSISTOR [J].

BOESEN, GF ;

JACOBS, JE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11) :2094-&

[2] Correlation between the stability and trap parameters of amorphous oxide thin film transistors [J].

Chong, Eugene ;

Park, Ki-Ho ;

Cho, Eun Ah ;

Choi, Jun Young ;

Kim, Bosul ;

You, Dong-Youn ;

Jang, Gun-Eik ;

Lee, Sang Yeol .

MICROELECTRONIC ENGINEERING, 2012, 91 :50-53

[3] Bulk-grain resistivity and positive temperature coefficient of ZnO-based varistors [J].

Fernández-Hevia, D ;

de Frutos, J ;

Caballero, AC ;

Fernández, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (02) :212-214

[4]

Fjeldly T.A., 1998, INTRO DEVICE MODELIN

[5] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].

Fortunato, E. ;

Barquinha, P. ;

Martins, R. .

ADVANCED MATERIALS, 2012, 24 (22) :2945-2986

[6] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[7] Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In-Ga-Zn-Oxide Thin Film Transistor [J].

Godo, Hiromichi ;

Kawae, Daisuke ;

Yoshitomi, Shuhei ;

Sasaki, Toshinari ;

Ito, Shunichi ;

Ohara, Hiroki ;

Kishida, Hideyuki ;

Takahashi, Masahiro ;

Miyanaga, Akiharu ;

Yamazaki, Shunpei .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)

[8] Fully patterned and low temperature transparent ZnO-based inverters [J].

Gutierrez-Heredia, G. ;

Mejia, I. ;

Rivas-Aguilar, M. E. ;

Hernandez-Como, N. ;

Martinez-Landeros, V. H. ;

Aguirre-Tostado, F. S. ;

Quevedo-Lopez, M. A. .

THIN SOLID FILMS, 2013, 545 :458-461

[9] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[10] Operating Temperature Trends in Amorphous In-Ga-Zn-O Thin-Film Transistors [J].

Hoshino, Ken ;

Wager, John F. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :818-820

← 1 2 →