Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al-preseeding and HT AlN buffer layers

被引：9

作者：

Kim, Jong Ock ^{[1
]}

Hong, Song Ki ^{[1
]}

Lim, Kee Young ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; MOCVD; structure; crack formation; FILMS; DISLOCATIONS; SILICON;

D O I：

10.1002/pssc.200983497

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the crack formation in GaN layers grown on Si(111) substrates by MOCVD using an AlN buffer layers and Al-preseeding process. With an appropriate AlN buffer thickness using optimal TMAl flow rate, we were able to counteract the crack formation usually observed in GaN layers deposited on Si(111) substrate. With a 120 nm thick AlN buffer layer, TMAl source flow rate 18 mu mol/min and Al-preseeding time 5 s, we were able to obtain nearly crack free 2.5 mu m GaN surface and a (002) plane HR-XRD rocking curve FWHM of 385 arcsec is achieved. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：4

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