Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

被引：53

作者：

Bouttemy, M. ^{[1
]}

Tran-Van, P. ^{[1
]}

Gerard, I. ^{[1
]}

Hildebrandt, T. ^{[1
]}

Causier, A. ^{[1
]}

Pelouard, J. L. ^{[2
]}

Dagher, G. ^{[2
]}

Jehl, Z. ^{[3
]}

Naghavi, N. ^{[3
]}

Voorwinden, G. ^{[4
]}

Dimmler, B. ^{[4
]}

Powalla, M. ^{[5
]}

Guillemoles, J. F. ^{[3
]}

Lincot, D. ^{[2
]}

Etcheberry, A. ^{[1
]}

机构：

[1] UVSQ, CNRS, UMR 8180, ILV, F-78035 Versailles, France

[2] CNRS, LPN, F-91460 Marcoussis, France

[3] Chim ParisTech, EDF, CNRS, IRDEP,UMR 7174, F-78401 Chatou, France

[4] Wuerth Elekt Res GmbH, D-70565 Stuttgart, Germany

[5] Zentrum Sonnenenergie & Wasserstoff Forsch ZSW, D-70565 Stuttgart, Germany

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

关键词：

CIGS; Etching; XPS; AFM; GF-AAS; Dissolution kinetic; Roughness; Bromine; Selenium; CU(IN; GA)SE-2; CUINSE2; MODULES; FILMS;

D O I：

10.1016/j.tsf.2010.12.219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CIGSe absorber was etched in HBr/Br-2/H2O to prepare defined thicknesses of CIGSe between 2.7 and 0.5 mu m. We established a reproducible method of reducing the absorber thickness via chemical etching. We determine the dissolution kinetics rate of CIGSe using trace analysis by graphite furnace atomic absorption spectrometry of Ga and Cu. The roughness of the etching surface decreases during the first 500 nm of the etching to a steady state value of the root-mean-square roughness near 50 nm. X-ray photoelectron spectroscopy analyses demonstrate an etching process occurring with a constant chemical composition of the treated surface acidic bromine solutions provide a controlled chemical thinning process resulting in an almost flat surface and a very low superficial Se enrichment. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7207 / 7211

页数：5

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