Long-Range Exciton Diffusion in Two-Dimensional Assemblies of Cesium Lead Bromide Perovskite Nanocrystals

被引:70
作者
Penzo, Erika [1 ]
Loiudice, Anna [2 ]
Barnard, Edward S. [1 ]
Borys, Nicholas J. [1 ]
Jurow, Matthew J. [1 ,3 ]
Lorenzon, Monica [1 ]
Rajzbaum, Igor [1 ]
Wong, Edward K. [1 ]
Liu, Yi [1 ,3 ]
Schwartzberg, Adam M. [1 ]
Cabrini, Stefano [1 ]
Whitelam, Stephen [1 ]
Buonsanti, Raffaella [2 ]
Weber-Bargioni, Alexander [1 ]
机构
[1] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
[2] Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, CH-1015 Lausanne, Switzerland
[3] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
关键词
perovskite nanocrystals; exciton diffusion; optoelectronics; Forster resonant energy transfer; excitonic transport; LIGHT-EMITTING-DIODES; LIGAND-MEDIATED SYNTHESIS; ENERGY-TRANSFER; COLLOIDAL SYNTHESIS; HALIDE PEROVSKITES; ROOM-TEMPERATURE; QUANTUM; TRANSPORT; CSPBX3; EMISSION;
D O I
10.1021/acsnano.0c01536
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Forster resonant energy transfer (FRET)-mediated exciton diffusion through artificial nanoscale building block assemblies could be used as an optoelectronic design element to transport energy. However, so far, nanocrystal (NC) systems supported only diffusion lengths of 30 nm, which are too small to be useful in devices. Here, we demonstrate a FRET-mediated exciton diffusion length of 200 nm with 0.5 cm(2)/s diffusivity through an ordered, two-dimensional assembly of cesium lead bromide perovskite nanocrystals (CsPbBr3 PNCs). Exciton diffusion was directly measured via steady-state and time-resolved photoluminescence (PL) microscopy, with physical modeling providing deeper insight into the transport process. This exceptionally efficient exciton transport is facilitated by PNCs' high PL quantum yield, large absorption cross section, and high polarizability, together with minimal energetic and geometric disorder of the assembly. This FRET-mediated exciton diffusion length matches perovskites' optical absorption depth, thus enabling the design of device architectures with improved performances and providing insight into the high conversion efficiencies of PNC-based optoelectronic devices.
引用
收藏
页码:6999 / 7007
页数:9
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