Thermoluminescence Responses of Photon and Electron Irradiated Ge- and Al-Doped SiO2 Optical Fibres

被引:25
|
作者
Wagiran, H. [1 ]
Hossain, I. [1 ]
Bradley, D. [2 ]
Yaakob, A. N. H. [1 ]
Ramli, T. [1 ]
机构
[1] Univ Teknol Malaysia, Dept Phys, Skudai 81310, Johor Darul Tak, Malaysia
[2] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
关键词
D O I
10.1088/0256-307X/29/2/027802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We carry out a comparison of the thermoluminescence (TL) response of photon and electron irradiated Ge- and Al-doped SiO2 optical fibres, as well as cross-comparison with that of TLD-100. Irradiation is made with 6 MeV electrons and 6 MV photons, for doses ranging from 0.2 Gy to 4.0 Gy. The commercially available Al- and Ge-doped optical fibres produce a linear dose-TL response. The TL yield for both of the doped fibres and also for TLD-100 is greater for electron irradiation than for photon irradiation. The TL yield of the Al-doped fibres is a small fraction of that of Ge-doped fibres (by a factor of 25), the Ge-doped fibres offering a response of 59% of that of TLD-100.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] Electron beam poling in amorphous Ge-doped H:SiO2 films
    Liu, Q.
    Poumellec, B.
    Zhao, X.
    Girard, G.
    Bouree, J. . E.
    Kudlinski, A.
    Martinelli, G.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (2-9) : 472 - 475
  • [42] Nonlinear optical properties of Al-doped nc-Si-SiO2 composite films
    College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China
    不详
    Pan Tao Ti Hsueh Pao, 2007, 5 (640-644):
  • [43] Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress
    Lim, Young Soo
    Seo, Seul Gi
    Kim, Bo Bae
    Choi, Hyoung-Seuk
    Seo, Won-Seon
    Cho, Yong Soo
    Park, Hyung-Ho
    ELECTRONIC MATERIALS LETTERS, 2012, 8 (04) : 375 - 379
  • [44] Effects of SiO2 interlayer on electrical properties of Al-doped ZnO films under bending stress
    Young Soo Lim
    Seul Gi Seo
    Bo Bae Kim
    Hyoung-Seuk Choi
    Won-Seon Seo
    Yong Soo Cho
    Hyung-Ho Park
    Electronic Materials Letters, 2012, 8 : 375 - 379
  • [45] Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2
    Moto, Kenta
    Sakiyama, Shin
    Okamoto, Hayato
    Hara, Hideyuki
    Nishimura, Hiroto
    Takakura, Kenichiro
    Tsunoda, Isao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
  • [46] Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass
    Ohama, M
    Fujiwara, T
    Ikushima, AJ
    APPLIED PHYSICS LETTERS, 1998, 73 (11) : 1481 - 1483
  • [47] Thermal annealing in FHD Ge-doped SiO2 film for applications in optical waveguides
    Zhang, LT
    Xie, WF
    Wang, J
    Li, AW
    Xing, H
    Zheng, W
    Zhang, YS
    APPLIED SURFACE SCIENCE, 2004, 228 (1-4) : 48 - 52
  • [48] Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass
    Toyota Technological Inst, Nagoya, Japan
    Appl Phys Lett, 11 (1481-1483):
  • [49] Structural, optical and magnetic properties of γ-irradiated SiO2 xerogel doped Fe2O3
    Mahmoud, H. H.
    Battisha, I. K.
    Ezz-Eldin, F. M.
    SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2015, 150 : 72 - 82
  • [50] Stability of electron-beam poling in N or Ge-doped H:SiO2 films
    Liu, Q.
    Poumellec, B.
    Blum, R.
    Girard, G.
    Bouree, J. -E.
    Kudlinski, A.
    Martinelli, G.
    APPLIED PHYSICS LETTERS, 2006, 88 (24)