Thermoluminescence Responses of Photon and Electron Irradiated Ge- and Al-Doped SiO2 Optical Fibres

被引：25
|
作者：
Wagiran, H. [1 ]
Hossain, I. [1 ]
Bradley, D. [2 ]
Yaakob, A. N. H. [1 ]
Ramli, T. [1 ]
机构：
[1] Univ Teknol Malaysia, Dept Phys, Skudai 81310, Johor Darul Tak, Malaysia
[2] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
来源：
CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 02期
关键词：
D O I：
10.1088/0256-307X/29/2/027802
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We carry out a comparison of the thermoluminescence (TL) response of photon and electron irradiated Ge- and Al-doped SiO2 optical fibres, as well as cross-comparison with that of TLD-100. Irradiation is made with 6 MeV electrons and 6 MV photons, for doses ranging from 0.2 Gy to 4.0 Gy. The commercially available Al- and Ge-doped optical fibres produce a linear dose-TL response. The TL yield for both of the doped fibres and also for TLD-100 is greater for electron irradiation than for photon irradiation. The TL yield of the Al-doped fibres is a small fraction of that of Ge-doped fibres (by a factor of 25), the Ge-doped fibres offering a response of 59% of that of TLD-100.
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页数：3
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