Thermoluminescence Responses of Photon and Electron Irradiated Ge- and Al-Doped SiO2 Optical Fibres

被引：25

作者：

Wagiran, H. ^{[1
]}

Hossain, I. ^{[1
]}

Bradley, D. ^{[2
]}

Yaakob, A. N. H. ^{[1
]}

Ramli, T. ^{[1
]}

机构：

[1] Univ Teknol Malaysia, Dept Phys, Skudai 81310, Johor Darul Tak, Malaysia

[2] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

来源：

CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 02期

关键词：

D O I：

10.1088/0256-307X/29/2/027802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We carry out a comparison of the thermoluminescence (TL) response of photon and electron irradiated Ge- and Al-doped SiO2 optical fibres, as well as cross-comparison with that of TLD-100. Irradiation is made with 6 MeV electrons and 6 MV photons, for doses ranging from 0.2 Gy to 4.0 Gy. The commercially available Al- and Ge-doped optical fibres produce a linear dose-TL response. The TL yield for both of the doped fibres and also for TLD-100 is greater for electron irradiation than for photon irradiation. The TL yield of the Al-doped fibres is a small fraction of that of Ge-doped fibres (by a factor of 25), the Ge-doped fibres offering a response of 59% of that of TLD-100.

引用

页数：3

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