Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

被引：44

作者：

Kubota, Takahide ^{[1
]}

Araidai, Masaaki ^{[1
]}

Mizukami, Shigemi ^{[1
]}

Zhang, Xianmin ^{[1
]}

Ma, Qinli ^{[1
]}

Naganuma, Hiroshi ^{[2
]}

Oogane, Mikihiko ^{[2
]}

Ando, Yasuo ^{[2
]}

Tsukada, Masaru ^{[1
]}

Miyazaki, Terunobu ^{[1
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 19期

关键词：

FILMS;

D O I：

10.1063/1.3659484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga46, Mn62Ga38, and Mn71Ga29 (at. %) electrodes was investigated. An MTJ with a Mn62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 degrees C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Delta(1) band dispersions for Mn-Ga alloys calculated by first principles. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659484]

引用

页数：3

共 26 条

[1] Mn3Ga, a compensated ferrimagnet with high Curie temperature and low magnetic moment for spin torque transfer applications [J].