Strained-Si with carbon incorporation for MOSFET source/drain engineering

被引：3
|
作者：
Lee, M. H. [1 ]
Chang, S. T. [2 ]
Lee, S. W. [3 ]
Chen, P. S. [4 ]
Shen, K. -W. [1 ]
Wang, W. -C. [2 ]
机构：
[1] Natl Taiwan Normal Univ, Inst Electopt Sci & Technol, Taipei 116, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung, Taiwan
[3] Natl Cent Univ, Inst Mat Sci & Engn, Tao Yuan, Taiwan
[4] Minghsin Univ Sci & Technol, Dept Mat Sci & Engn, Hsinchu, Taiwan
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 19期
关键词：
strained-Si : C; methysilane; strain;
D O I：
10.1016/j.apsusc.2008.02.179
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The carbon incorporation in strained- Si source/ drain of MOSFET is demonstrated. The methylsilane (CH3SiH3) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D-it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained- Si source/drain with carbon incorporation is not only being stressor but also lower Rs, and make a potential candidate for future high- speed ballistic devices beyond 10 nm technology node. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：6147 / 6150
页数：4
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