High-power laser diodes with dry-etched mirror facets and integrated monitor photodiodes

被引：12

作者：

Deichsel, E ^{[1
]}

Eberhard, F ^{[1
]}

Jäger, R ^{[1
]}

Unger, P ^{[1
]}

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 02期

关键词：

etching; integrated optoelectronics; semiconductor device fabrication; semiconductor lasers;

D O I：

10.1109/2944.954118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power broad-area InGaAs-AlGaAs-GaAs single-quantum-well separate-confinement heterostructure (SQW-GRINSCH) lasers with dry-etched mirror facets and integrated monitor photodiodes have been investigated. A multilayer resist system has been employed as a mask for the chemically assisted ion-beam etching (CAIBE) process resulting in vertical and smooth laser facets. Thick electroplated gold layers on top of the ohmic contacts improve the heatsinking of the lasers leading to reasonable continuous-wave (CW) output powers even when the devices are mounted junction-side up. Monolithically integrated monitor photodiodes provide a linear response to the optical output powers of the laser diodes. The properties of broad-area lasers with dry-etched and cleaved facets are almost identical. Record values for the CW output powers of 2.59 W per uncoated facet and wall-plug efficiencies of more than 55% have been achieved with junction-side-down mounted devices.

引用

页码：106 / 110

页数：5

共 15 条

[1] A novel short-cavity laser with deep-grating distributed Bragg reflectors [J].

Baba, T ;

Hamasaki, M ;

Watanabe, N ;

Kaewplung, P ;

Matsutani, A ;

Mukaihara, T ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1390-1394

[2] Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers [J].

Biellak, SA ;

Fanning, G ;

Sun, Y ;

Wong, SS ;

Siegman, AE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (02) :219-230

[3]

Buchmann P., 1989, Microelectronic Engineering, V9, P485, DOI 10.1016/0167-9317(89)90106-8

[4]

Deimel P. P., 1991, Journal of Micromechanics and Microengineering, V1, P199, DOI 10.1088/0960-1317/1/4/002

[5] Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system [J].

Eberhard, F ;

Schauler, M ;

Deichsel, E ;

Kirchner, C ;

Unger, P .

MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) :323-326

[6] AN INGAAS GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL RING LASER WITH A REACTIVE ION-ETCHED TETRAGONAL CAVITY [J].

FANG, ZJ ;

SMITH, GM ;

FORBES, DV ;

COLEMAN, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (01) :44-48

[7] High-rate etching of GaAs using chlorine atmospheres doped with a Lewis acid [J].

Franz, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03) :1542-1546

[8] INVESTIGATION OF CHEMICALLY ASSISTED ION-BEAM ETCHING FOR THE FABRICATION OF VERTICAL, ULTRAHIGH QUALITY FACETS IN GAAS [J].

HAGBERG, M ;

JONSSON, B ;

LARSSON, AG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :555-566

[9] Edge-emitting GaInAs-AlGaAs microlasers [J].

Höfling, E ;

Schafer, F ;

Reithmaier, JP ;

Forschel, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :943-945

[10] 63% wallplug efficiency MBE grown InGaAs AlGaAs broad-area laser diodes and arrays with carbon p-type doping using CBr4 [J].

Jäger, R ;

Heerlein, J ;

Deichsel, E ;

Unger, P .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :882-885

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