The effects of sintering temperature on the morphology and physical properties of in situ Si3N4 bonded MgO-C refractory

被引：41
作者：
Yu, Chao [1 ]
Ding, Jun [2 ]
Deng, Chengji [1 ]
Zhu, Hongxi [1 ]
Peng, Nai [3 ]
机构：
[1] Wuhan Univ Sci & Technol, State Key Lab Refractories & Met, Wuhan 430081, Hubei, Peoples R China
[2] Wuhan Univ Sci & Technol, Coll Mat & Met, Wuhan 430081, Hubei, Peoples R China
[3] Jiyuan City Refractory Furnace Co LTD, Jiyuan 454650, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2018年 / 44卷 / 01期
基金：
中国国家自然科学基金;
关键词：
MgO-C refractory; In situ; Si3N4; Sintering temperature; Morphologies; SILICON-NITRIDE; LOW-CARBON; CARBOTHERMAL REDUCTION; AL2O3-C REFRACTORIES; COMBUSTION SYNTHESIS; NANO CARBON; GROWTH; MICROSTRUCTURE; CRYSTALS; POWDER;
D O I：
10.1016/j.ceramint.2017.10.058
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Si3N4 bonded MgO-C refractory was formed in situ using silicon powder as a raw material through the nitriding processing. The effects of sintering temperature on the microstructural evolution and physical properties of the in situ formed Si3N4 bonded MgO-C refractory were investigated. The results showed that alpha-Si3N4 and beta-Si3N4 were generated from the reaction of Si-N-2 in MgO-C refractories at 1450 degrees C. The beta-Si3N4 phase was the major ceramic bonding phase which connects neighbouring MgO and graphite particles. Rod-like beta-Si3N4 crystals with conical tips were formed by the direct nitriding of liquid silicon following a vapor-liquid-solid growth mechanism in the initial stage which was followed by a vapor-solid reaction at elevated temperatures. Based on the determined characteristic properties of the specimens, 1500 degrees C is the best sintering temperature for the in situ formation of Si3N4 in MgO-C refractory.
引用
收藏
页码：1104 / 1109
页数：6
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