Diffusion Length Measurement in Nanocrystalline CdSe from Steady State Photocarrier Grating Technique

被引：2

作者：

Al-Kabbi, Alaa. S. ^{[1
]}

Sharma, Kriti ^{[1
]}

Saini, G. S. S. ^{[1
]}

Tripathi, S. K. ^{[1
]}

机构：

[1] Panjab Univ, Dept Phys, Ctr Adv Study Phys, Chandigarh 160014, India

来源：

INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011) | 2011年 / 1393卷

关键词：

Nanocrystalline thin films; CdSe; SSPG; Diffusion Length (L(diff)); MICROCRYSTALLINE SILICON; AMORPHOUS-SILICON; FILMS;

D O I：

10.1063/1.3653713

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of CdSe are prepared by Physical Vapor Deposition technique. The nanocrystalline films have been investigated by Steady -State Photocarrier Grating technique (SSPG) and Steady-State photoconductivity measurements. The minority carrier diffusion length (L(diff)) is obtained both from the best fit of experimental photocurrent ratio beta versus grating period (Lambda) and from the "Balberg plot". The grating quality factor (gamma(o)) is 0.85 indicating almost negligible surface roughness present in the sample.

引用

页数：2

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