Determination of the intrinsic parameters of SnBi4Se7 via the characterization of electrical properties

被引：1

作者：

Ahmed, S. A. ^{[1
]}

Diab, A. K. ^{[1
]}

Hakeem, A. M. Abdel ^{[1
]}

机构：

[1] Sohag Univ, Dept Phys, Fac Sci, Sohag 82524, Egypt

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

关键词：

D O I：

10.1063/1.2905262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

I-V measurements and temperature dependence of electrical conductivity on polycrystalline samples of Bi2Se3 and SnBi4Se7 have been performed. From the analysis of the temperature dependence of electron concentration in the activation regime above room temperature, the effective mass m(e)(*) has been determined. Some intrinsic and contact properties such as barrier heights, ideality factors, and carrier concentrations have been investigated by using I-V characteristics. It has been found that all samples exhibit Ohmic and space charge limited conduction at low and high fields, respectively. (C) 2008 American Institute of Physics.

引用

页数：3

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