Electrical characterization of DC sputtered ZnO/p-Si heterojunction

ZnO thin films were formed on a p-Si semiconductor and a glass by DC sputtering technique. The ZnO films were analyzed using UV-vis spectroscopy and X-ray diffraction (XRD). Electrical and photoelectrical parameters of ZnO/p-Si heterojunction were determined by current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) of the device in dark and under the light with 100 mW/cm(2) and AM 1.5 illumination property. The device had a good rectifying property with 1.35 ideality factor, 0.76 eV barrier height and 6.69 k Omega series resistance values. It was seen that I-V, C-V and C-f measurements of the heterojunction had good sensitivity to the light and the device behaves as a photodiode and a photocapacitor. (C) 2011 Elsevier B.V. All rights reserved.