The influence of surface texture and temparature deposition of TiO2 layer on crystalline silicon solar cells parameters

In the present work, the investigation of the titanium dioxide (TiO2) thin layer as an antireflection coating for silicon solar cells are presented. The TiO2 layers were obtained by the chemical vapour deposition method using tetraethylorthotitanat (C2H5O)Ti at temperatures of the silicon wafers in the range from 150 degrees C to 400 degrees C. It has been established that all of the obtained TiO2 layers contain anatase phase embedded in the amorphous background. A progress of the crystallization process with the increasing temperature of the substrate during the deposition has been observed. The change in opto-electronic parameters of silicon solar cells as a function of the deposition temperature of the antireflection coating has been discussed, taking into account the evolution of the crystallographic structure.