Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

被引：12

作者：

Chen, Bo-Chun ^{[1
,3
]}

Chang, Chun-Yen ^{[2
]}

Fu, Yi-Keng ^{[3
]}

Huang, Kai-Feng ^{[1
]}

Lu, Yu-Hsuan ^{[4
]}

Su, Yan-Kuin ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Ind Technol Res Inst, Hsinchu 300, Taiwan

[4] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 22期

关键词：

Efficiency droop; internal quantum efficiency; light-emitting diodes (LEDs);

D O I：

10.1109/LPT.2011.2166540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compared with the sample with unique 9-nm-thick barriers. A numerical study is executed to analyze the hole distributions in the quantum wells. From the simulated results, it is found that the hole injection efficiency can be improved at high injection current. Hence, the effective recombination of electron and hole is also enhanced at high injection current.

引用

页码：1682 / 1684

页数：3

共 11 条

[1]

[Anonymous], APPL PHYS LETT

[2]

Gardner N. F., 2009, APPL PHYS LETT, V95

[3] Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes [J].

Han, Sang-Heon ;

Cho, Chu-Young ;

Lee, Sang-Jun ;

Park, Tae-Young ;

Kim, Tae-Hun ;

Park, Seung Hyun ;

Kang, Sang Won ;

Kim, Je Won ;

Kim, Yong Chun ;

Park, Seong-Ju .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

[4] Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes [J].

Han, Sang-Heon ;

Lee, Dong-Yul ;

Lee, Sang-Jun ;

Cho, Chu-Young ;

Kwon, Min-Ki ;

Lee, S. P. ;

Noh, D. Y. ;

Kim, Dong-Joon ;

Kim, Yong Chun ;

Park, Seong-Ju .

APPLIED PHYSICS LETTERS, 2009, 94 (23)

[5] Origin of efficiency droop in GaN-based light-emitting diodes [J].

Kim, Min-Ho ;

Schubert, Martin F. ;

Dai, Qi ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Piprek, Joachim ;

Park, Yongjo .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[6] Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm [J].

Pope, IA ;

Smowton, PM ;

Blood, P ;

Thomson, JD ;

Kappers, MJ ;

Humphreys, CJ .

APPLIED PHYSICS LETTERS, 2003, 82 (17) :2755-2757

[7] Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping [J].

Rozhansky, I. V. ;

Zakheim, D. A. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (01) :227-230

[8]

Schubert M.F., 2008, APPL PHYS LETT, V93

[9] Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes [J].

Schubert, Martin F. ;

Chhajed, Sameer ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Koleske, Daniel D. ;

Crawford, Mary H. ;

Lee, Stephen R. ;

Fischer, Arthur J. ;

Thaler, Gerald ;

Banas, Michael A. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[10]

Wang C.H., 2010, APPL PHYS LETT, V97

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