A comparative study of spin Hall magnetoresistance in Fe2O3-based systems

被引：13
|
作者：
Zhou, Y. J. [1 ]
Chen, X. Z. [1 ]
Zhou, X. F. [1 ]
Bai, H. [1 ]
Chen, R. Y. [1 ]
Pan, F. [1 ]
Song, C. [1 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat, MOE, Beijing 100084, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2020年 / 127卷 / 16期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
37;
D O I：
10.1063/5.0005184
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spin Hall magnetoresistance (SMR) provides a unique opportunity for the signal readout of magnetic ordering, especially for magnetic insulators. However, the magnitude of SMR signals is quite small, generally lower than one in a thousand, which is a persistent challenge in the field of spintronics. Here, we investigate SMR at room temperature in alpha -Fe2O3/Pt and gamma -Fe2O3/Pt bilayers as well as the alpha -Fe2O3/Pt/gamma -Fe2O3 trilayer, where alpha -Fe2O3 and gamma -Fe2O3 are antiferromagnetic and ferrimagnetic materials, respectively. In contrast to the positive SMR in the gamma -Fe2O3/Pt bilayer, an unprecedentedly large negative SMR with the magnitude of similar to 0.35% is observed in the alpha -Fe2O3/Pt bilayer due to the spin-flop. The alpha -Fe2O3/Pt/gamma -Fe2O3 trilayer shows features of a combination of positive and negative SMR. A comparative study of SMR in the Fe2O3 family not only enriches spin physics, but also makes Fe2O3 a versatile candidate in spintronic devices.
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页数：7
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