Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

被引：21

作者：

Brauns, Matthias ^{[1
]}

Ridderbos, Joost ^{[1
]}

Li, Ang ^{[2
,4
]}

van der Wiel, Wilfred G. ^{[1
]}

Bakkers, Erik P. A. M. ^{[2
,3
]}

Zwanenburg, Floris A. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NanoElect Grp, POB 217, NL-7500 AE Enschede, Netherlands

[2] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands

[3] Delft Univ Technol, QuTech & Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[4] Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Pingleyuan 100, Beijing 100024, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 14期

关键词：

ISOTOPE-SEPARATION; SINGLE-CRYSTALS; INAS NANOWIRES; TRANSPORT; GROWTH;

D O I：

10.1063/1.4963715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing. Published by AIP Publishing.

引用

页数：4

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