Nanocrystal Formation in Silicon Oxy-Nitride Films for Photovoltaic Applications: Optical and Electrical Properties

被引：14

作者：

Perani, Martina ^{[1
]}

Brinkmann, Nils ^{[2
]}

Hammud, Adnan ^{[2
]}

Cavalcoli, Daniela ^{[1
]}

Terheiden, Barbara ^{[2
]}

机构：

[1] Univ Bologna, Dept Phys & Astron, I-40127 Bologna, Italy

[2] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2015年 / 119卷 / 24期

关键词：

OXYNITRIDE FILMS; ABSORPTION; GAP;

D O I：

10.1021/acs.jpcc.5b02286

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of nanocrystalline SiOxNy are studied in view of their application in silicon heterojunction (SHJ) solar cells. In particular, the formation of the nanocrystals and their effects on the electrical and optical properties of the films are investigated. The role of the oxygen content on the properties of the layers is clarified as well. The obtained layers show very high conductivity (44 S/cm), low activation energy (1.85 meV) and high Tauc gap (2.5 eV), promising features for their application in photovoltaics.

引用

页码：13907 / 13914

页数：8

共 37 条

[1] On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films [J].