A new RF CMOS Gilbert mixer with improved noise figure and linearity

被引：65

作者：

Yoon, Jehyung ^{[1
]}

Kim, Huijung ^{[2
]}

Park, Changjoon ^{[1
]}

Yang, Jinho ^{[3
]}

Song, Hyejeong ^{[1
]}

Lee, Sekyeong ^{[1
]}

Kim, Bumman ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect Engn, Gyeongbuk 790784, South Korea

[2] Samsung Elect Co Ltd, Syst Large Scale Integrat Div, Gyeunggi Do 431836, South Korea

[3] SK Telecom, Seoul 100999, South Korea

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 03期

关键词：

CMOS; direct conversion; double-balanced mixer; flicker noise; Gilbert mixer; IF; 1/f noise;

D O I：

10.1109/TMTT.2008.916942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The noise figure of an RF CMOS mixer is strongly affected by flicker noise. The noise figure can be improved using pMOS switch circuits, which insert current at the on/off crossing instants of the local oscillator switch stage because the circuits reduce the flicker noise injection. When it is applied to a conventional Gilbert mixer, the injection efficiency and linearity are degraded by the nonlinear parasitic capacitances of the pMOS switch circuits and the leakage through the parasitic path. We propose the pMOS switch circuits with an inductor, which tunes out the parasitic components at 2f(o) and closes out the leakage path. The mixer fabricated in 0.13-mu m CMOS at 2.4-GHz center frequency has provided improved characteristics for linearity and noise figure.

引用

页码：626 / 631

页数：6