Thermoelectric Properties of In-Doped PbTe

被引:8
|
作者
Guch, Mykhailo [1 ]
Sankar, Cheriyedath Raj [1 ]
Salvador, James [2 ]
Meisner, G. [2 ]
Kleinke, Holger [1 ]
机构
[1] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada
[2] Gen Motors Res & Dev Ctr, Warren, MI 48090 USA
关键词
Lead Telluride; Doping; Solid Solution; Semiconductor; Thermoelectric; ELECTRICAL-PROPERTIES; POWER-GENERATION; LEAD-TELLURIDE; FIGURE; MERIT; EFFICIENCY; ALLOYS; SYSTEM; STATES; GAP;
D O I
10.1166/sam.2011.1191
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The thermoelectric properties of InxPb1-3x/200Te (with x = 0.005, 0.01, 0.015, 0.02) were investigated in the temperature range from 300 K to 700 K. The materials were found to be n-type semiconductors. The values of the Seebeck coefficient increase with increasing In content. The low thermal conductivity values < 1.9 Wm(-1)K(-1) make these materials potential candidates for thermoelectric applications. The most promising sample in the current study, with x = 0.005, possesses a figure-of-merit of ZT = 0.45 at 600 K as determined on pellets directly cut from the ingot.
引用
收藏
页码:615 / 620
页数:6
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