Thermoelectric Properties of In-Doped PbTe

被引：8

作者：

Guch, Mykhailo ^{[1
]}

Sankar, Cheriyedath Raj ^{[1
]}

Salvador, James ^{[2
]}

Meisner, G. ^{[2
]}

Kleinke, Holger ^{[1
]}

机构：

[1] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada

[2] Gen Motors Res & Dev Ctr, Warren, MI 48090 USA

来源：

SCIENCE OF ADVANCED MATERIALS | 2011年 / 3卷 / 04期

关键词：

Lead Telluride; Doping; Solid Solution; Semiconductor; Thermoelectric; ELECTRICAL-PROPERTIES; POWER-GENERATION; LEAD-TELLURIDE; FIGURE; MERIT; EFFICIENCY; ALLOYS; SYSTEM; STATES; GAP;

D O I：

10.1166/sam.2011.1191

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The thermoelectric properties of InxPb1-3x/200Te (with x = 0.005, 0.01, 0.015, 0.02) were investigated in the temperature range from 300 K to 700 K. The materials were found to be n-type semiconductors. The values of the Seebeck coefficient increase with increasing In content. The low thermal conductivity values < 1.9 Wm(-1)K(-1) make these materials potential candidates for thermoelectric applications. The most promising sample in the current study, with x = 0.005, possesses a figure-of-merit of ZT = 0.45 at 600 K as determined on pellets directly cut from the ingot.

引用

页码：615 / 620

页数：6

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