Thermoelectric Properties of In-Doped PbTe

被引：8
|
作者：
Guch, Mykhailo [1 ]
Sankar, Cheriyedath Raj [1 ]
Salvador, James [2 ]
Meisner, G. [2 ]
Kleinke, Holger [1 ]
机构：
[1] Univ Waterloo, Dept Chem, Waterloo, ON N2L 3G1, Canada
[2] Gen Motors Res & Dev Ctr, Warren, MI 48090 USA
来源：
SCIENCE OF ADVANCED MATERIALS | 2011年 / 3卷 / 04期
关键词：
Lead Telluride; Doping; Solid Solution; Semiconductor; Thermoelectric; ELECTRICAL-PROPERTIES; POWER-GENERATION; LEAD-TELLURIDE; FIGURE; MERIT; EFFICIENCY; ALLOYS; SYSTEM; STATES; GAP;
D O I：
10.1166/sam.2011.1191
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The thermoelectric properties of InxPb1-3x/200Te (with x = 0.005, 0.01, 0.015, 0.02) were investigated in the temperature range from 300 K to 700 K. The materials were found to be n-type semiconductors. The values of the Seebeck coefficient increase with increasing In content. The low thermal conductivity values < 1.9 Wm(-1)K(-1) make these materials potential candidates for thermoelectric applications. The most promising sample in the current study, with x = 0.005, possesses a figure-of-merit of ZT = 0.45 at 600 K as determined on pellets directly cut from the ingot.
引用
收藏
页码：615 / 620
页数：6
相关论文
共 50 条
  • [1] THERMOELECTRIC PROPERTIES OF SILVER DOPED PBTE
    BORISOVA, LD
    DIMITROVA, SK
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (01): : K25 - K28
  • [2] THERMOELECTRIC PROPERTIES OF IMPURITY DOPED PBTE
    BORISOVA, LD
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (01): : K19 - K22
  • [3] Thermoelectric properties of In and I doped PbTe
    Bali, Ashoka
    Chetty, Raju
    Sharma, Amit
    Rogl, Gerda
    Heinrich, Patrick
    Suwas, Satyam
    Misra, Dinesh Kumar
    Rogl, Peter
    Bauer, Ernst
    Mallik, Ramesh Chandra
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (17)
  • [4] Synthesis of In-doped PbTe crystals
    Kudryavtseva, SM
    Kuznetsova, TA
    Zlomanov, VP
    Tananaeva, OI
    INORGANIC MATERIALS, 1997, 33 (03) : 250 - 253
  • [5] Evaluation of thermoelectric properties of impurity-doped PbTe
    Orihashi, M
    Noda, Y
    Kaibe, TH
    Nishida, IA
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1997, 61 (03) : 241 - 246
  • [6] Thermoelectric power properties of Ge doped PbTe alloys
    Adam, A. M.
    Ibrahim, E. M. M.
    Panbude, Anshu
    Jayabal, K.
    Veluswamy, Pandiyarasan
    Diab, A. K.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 872
  • [7] Thermoelectric properties of Bi-doped PbTe composites
    Popescu, A.
    Datta, A.
    Nolas, G. S.
    Woods, L. M.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (10)
  • [8] Evaluation of thermoelectric properties of impurity-doped PbTe
    Orihashi, M
    Noda, Y
    Kaibe, HT
    Nishida, IA
    MATERIALS TRANSACTIONS JIM, 1998, 39 (06): : 672 - 678
  • [9] Growth of In-Doped PbTe Films on Si Substrates
    A. M. Samoilov
    S. A. Buchnev
    Yu. V. Synorov
    B. L. Agapov
    A. M. Khoviv
    Inorganic Materials, 2003, 39 : 1132 - 1137
  • [10] Growth of in-doped PbTe films on Si substrates
    Samoilov, AM
    Buchnev, SA
    Synorov, YV
    Agapov, BL
    Khoviv, AM
    INORGANIC MATERIALS, 2003, 39 (11) : 1132 - 1137
12345