Admittance extraction and analysis for through silicon vias near edge and at corner of silicon substrate

被引：0
作者：
Liu, Sheng [1 ]
Tang, Wanchun [2 ,3 ]
Huang, Cheng [1 ]
Zhu, Jianping [1 ]
Zhuang, Wei [2 ,3 ]
机构：
[1] Nanjing Univ Sci & Technol, Dept Commun Engn, Nanjing, Jiangsu, Peoples R China
[2] Nanjing Normal Univ, Jiangsu Key Lab Optoelect Technol, Nanjing, Jiangsu, Peoples R China
[3] Jiangsu Ctr Collaborat Innovat Geog Informat Reso, Nanjing, Jiangsu, Peoples R China
来源：
IET MICROWAVES ANTENNAS & PROPAGATION | 2016年 / 10卷 / 12期
关键词：
electric admittance; silicon; method of moments; three-dimensional integrated circuits; elemental semiconductors; integrated circuit design; admittance extraction; admittance analysis; silicon substrate; through silicon vias; method of moment; image method; wave propagation mode; silicon-outer region interfaces; TSV; Si; COMPUTATIONAL ELECTROMAGNETICS CEM; SELECTIVE VALIDATION FSV; CAPACITANCE MATRIX; THROUGH-SILICON; INTERCONNECTS; INTERPOSER; MODELS; TSVS;
D O I：
10.1049/iet-map.2015.0373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Due to the charge at the interfaces between the silicon substrate and its outer region, the admittance of the through silicon vias (TSVs) near the edge and at the corner of the silicon is different from that of the centre case, which is hardly calculated by conventional empirical formulas. Utilising the method of moment combined with the image method in this study, those admittances can be easily extracted. The difference on the admittance between edge/corner and centre cases is discussed with the frequency and the wave propagation mode. The influence of the distance to the silicon-outer region interfaces and pitches of the TSVs on the admittance are also evaluated and compared in edge and corner cases. The scope of the conventional empirical formulas is also given for the admittance calculation of TSVs in edge/corner case, in order to offer help for the TSVs design.
引用
收藏
页码：1345 / 1351
页数：7
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