Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

被引：9

作者：

Fan, J. C. ^{[1
]}

Zhu, C. Y. ^{[1
]}

Yang, B. ^{[1
]}

Fung, S. ^{[1
]}

Beling, C. D. ^{[1
]}

Brauer, G. ^{[2
]}

Anwand, W. ^{[3
]}

Grambole, D. ^{[2
]}

Skorupa, W. ^{[2
]}

Wong, K. S. ^{[4
]}

Zhong, Y. C. ^{[4
]}

Xie, Z. ^{[5
]}

Ling, C. C. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Pokfulam, Hong Kong, Peoples R China

[2] Forschungszentrum Dresden Rossendorf, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

[3] Forschungszentrum Dresden Rossendorf, Inst Strahlenphys, D-01314 Dresden, Germany

[4] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[5] Hunan Univ, Coll Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 03期

关键词：

ZINC-OXIDE; PHOTOLUMINESCENCE;

D O I：

10.1116/1.3525639

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Arsenic doped ZnO and ZnMgO films were deposited on SiO(2) using radio frequency magnetron sputtering and ZnO-Zn(3)As(2) and ZnO-Zn(3)As(2)-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of similar to 10(17) cm(-3) and mobility of similar to 8 cm(2) V(-1) s(-1) were obtained at substrate temperatures of 400-500 degrees C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As(Zn)-2V(Zn) shallow acceptor complex and removes the compensating hydrogen center. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3525639]

引用

页数：4

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