Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

被引：13
作者：
Srnanek, R
Kinder, R
Sciana, B
Radziewicz, D
McPhail, DS
Littlewood, SD
Novotny, I
机构：
[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Dept Microelect, Bratislava 81219, Slovakia
[2] Univ Wroclaw, Fac Elect, Inst Microsyst Technol, PL-50372 Wroclaw, Poland
[3] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England
[4] Evans Europe, Cascade Sci, Uxbridge, Middx, England
来源：
APPLIED SURFACE SCIENCE | 2001年 / 177卷 / 1-2期
关键词：
Raman spectroscopy; SIMS; ECV; doping concentration; carrier concentration; bevelled structure;
D O I：
10.1016/S0169-4332(01)00227-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A method for determination of doping concentration profiles of GaAs multilayer structures on a bevelled surface by Raman spectroscopy is presented. By scanning the laser beam along the bevel we obtained micro-Raman spectra in different depth positions in the structure. Calculated I-TO/I-LO intensities determine the doping concentration in these points for values above 3 x 10(16) cm(-3). The results are compared with electrochemical capacitance-voltage technique and secondary ion mass spectrometry, Some specific problems are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：139 / 145
页数：7
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