Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy

被引:38
作者
Tuin, Gerben L. [1 ]
Borgstrom, Magnus T. [1 ]
Tragardh, Johanna [1 ]
Ek, Martin [2 ]
Wallenberg, L. Reine [2 ]
Samuelson, Lars [1 ]
Pistol, Mats-Erik [1 ]
机构
[1] Lund Univ, Solid State Phys Nanometer Struct Consortium, S-22100 Lund, Sweden
[2] Lund Univ, Polymer & Mat Chem nCHREM, S-22100 Lund, Sweden
基金
瑞典研究理事会;
关键词
wurtzite InP; photoluminescence; excitation spectroscopy; valence band structure; SUPERLATTICES;
D O I
10.1007/s12274-010-0065-x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top of the valence band is split, as expected theoretically. This splitting of the valence band is peculiar to wurtzite InP and does not occur in zinc blende InP. We find the energy difference between the two bands to be 40 meV.
引用
收藏
页码:159 / 163
页数:5
相关论文
共 15 条
  • [1] Twinning superlattices in indium phosphide nanowires
    Algra, Rienk E.
    Verheijen, Marcel A.
    Borgstrom, Magnus T.
    Feiner, Lou-Fe
    Immink, George
    van Enckevort, Willem J. P.
    Vlieg, Elias
    Bakkers, Erik P. A. M.
    [J]. NATURE, 2008, 456 (7220) : 369 - 372
  • [2] Optical properties of rotationally twinned InP nanowire heterostructures
    Bao, Jiming
    Bell, David C.
    Capasso, Federico
    Wagner, Jakob B.
    Martensson, Thomas
    Tragardh, Johanna
    Samuelson, Lars
    [J]. NANO LETTERS, 2008, 8 (03) : 836 - 841
  • [3] CONCENTRATION-DEPENDENT ABSORPTION AND PHOTOLUMINESCENCE OF N-TYPE INP
    BUGAJSKI, M
    LEWANDOWSKI, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 521 - 530
  • [4] Caroff P, 2009, NAT NANOTECHNOL, V4, P50, DOI [10.1038/nnano.2008.359, 10.1038/NNANO.2008.359]
  • [5] Predicted band structures of III-V semiconductors in the wurtzite phase
    De, A.
    Pryor, Craig E.
    [J]. PHYSICAL REVIEW B, 2010, 81 (15):
  • [6] Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
    Dubrovskii, V. G.
    Sibirev, N. V.
    [J]. PHYSICAL REVIEW B, 2008, 77 (03)
  • [7] SHALLOW N+ DIFFUSION INTO INP BY AN OPEN-TUBE DIFFUSION TECHNIQUE
    GHANDHI, SK
    PARAT, KK
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 209 - 211
  • [8] Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
    Glas, Frank
    Harmand, Jean-Christophe
    Patriarche, Gilles
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (14)
  • [9] Size-selected gold nanoparticles by aerosol technology
    Magnusson, MH
    Deppert, K
    Malm, JO
    Bovin, JO
    Samuelson, L
    [J]. NANOSTRUCTURED MATERIALS, 1999, 12 (1-4): : 45 - 48
  • [10] Crystal-structure-dependent photoluminescence from InP nanowires
    Mattila, M
    Hakkarainen, T
    Mulot, M
    Lipsanen, H
    [J]. NANOTECHNOLOGY, 2006, 17 (06) : 1580 - 1583