Electron g-factor distribution in self-assembled quantum dots

被引：21
|
作者：
Sheng, Weidong [1 ,2 ]
Xu, S. J. [2 ]
Hawrylak, Pawel [3 ]
机构：
[1] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
PHYSICAL REVIEW B | 2008年 / 77卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.77.241307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Based on a tight-binding study of the electronic spin structure in self-assembled InGaAs/GaAs quantum dots, we propose a theory to explain why the electron g factor in these artificial atoms is insensitive to the variation of the structural dimensions and chemical composition profile and also present a microscopic picture to understand the isotropic behavior of the lateral electron g factor. The former provides an important justification for the recent experimental measurement of electron g factors in an ensemble of quantum dots, while the latter overrides the common knowledge that the shape anisotropy of quantum dots has an important effect on the in-plane electron g-factor anisotropy.
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页数：4
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