Disorder-driven transition in a chain with power-law hopping

被引:23
作者
Gaerttner, M. [1 ,2 ]
Syzranov, S. V. [2 ,3 ]
Rey, A. M. [1 ,2 ,3 ]
Gurarie, V. [2 ,3 ]
Radzihovsky, L. [1 ,2 ,3 ]
机构
[1] Univ Colorado, NIST, JILA, Boulder, CO 80309 USA
[2] Univ Colorado, Ctr Theory Quantum Matter, Boulder, CO 80309 USA
[3] Univ Colorado, Dept Phys, Boulder, CO 80309 USA
基金
美国国家科学基金会;
关键词
CRITICAL-BEHAVIOR; DEGENERATE SEMICONDUCTORS; QUANTUM;
D O I
10.1103/PhysRevB.92.041406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study a one-dimensional (1D) system with a power-law quasiparticle dispersion alpha|k|(alpha) sgn k in the presence of a short-range-correlated random potential, and demonstrate that for alpha < 1/2 it exhibits a disorder-driven quantum phase transition with critical properties similar to those of the localization transition near the edge of the band of a semiconductor in high dimensions, as studied recently [Phys. Rev. Lett. 114, 166601 (2015); Phys. Rev. B 91, 035133 (2015)]. Despite the absence of localization in the considered 1D system, the disorder-driven transition manifests itself, for example, in a critical form of the disorder-averaged density of states. We confirm the existence of the transition by numerical simulations and find the critical exponents and the critical disorder strength as a function of a. The proposed system thus presents a convenient platform for numerical studies of the recently predicted unconventional high-dimensional localization effects and has the potential for experimental realizations in chains of ultracold atoms in optical traps.
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页数:5
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