Large Threshold Voltage Shifts of Nanostructured-Thin Film ZnS:Mn Electroluminescent Devices

被引：0

作者：

Lee, Sang Geul ^{[2
]}

Choi, Sang Hyun ^{[1
]}

Moon, Hee Song ^{[1
]}

Sohn, Sang Ho ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea

[2] Deagu Ctr, Korea Basic Sci Inst, Deagu 702201, South Korea

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2011年 / 551卷

关键词：

ZnS:Mn electroluminescent device; Nanosized-Ta2O5; insulator; Threshold voltage shift; Interface states; NANOCRYSTALS; LUMINESCENCE; PHOTOLUMINESCENCE; MN;

D O I：

10.1080/15421406.2011.600109

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have studied electro-optical properties of nanostructured-thin film electroluminescent devices(NS-TFELD) with a nanosized-tantalum pentoxide(Ta2O5) insulator layer inserted into the ZnS:Mn phosphor layer. A large threshold voltage shift Delta V-th has been observed in NS-TFELD. The change in the transferred charge Delta Q seems to relate to the large shifts of Delta V-th, implying that the change in interface states due to the nanosized oxide layer will be responsible for the shifts of V-th.

引用

页码：9 / 13

页数：5

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