Avalanche multiplication in AlGaN based solar-blind photodetectors

被引：98

作者：

McClintock, R ^{[1
]}

Yasan, A ^{[1
]}

Minder, K ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

关键词：

D O I：

10.1063/1.2140610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MV/cm. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 50 条

[41] High-Performance AlGaN-Based Solar-Blind UV Photodetectors for Sensing Applications [J].

Chen, Yiping ;

Zheng, Chaohong ;

Chen, Yiren .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (18)

[42] Polarization-Sensitive Solar-Blind Ultraviolet Photodetectors Based on Semipolar (1122) AlGaN Film [J].

Gao, Yaqi ;

Yu, Yali ;

Yang, Jiankun ;

Wang, Pan ;

Duo, Yiwei ;

Yang, Juehan ;

Huo, Ziqiang ;

Ran, Junxue ;

Wang, Junxi ;

Wei, Zhongming ;

Wei, Tongbo .

ACS APPLIED MATERIALS & INTERFACES, 2025, 17 (06) :9554-9562

[43] AlGaN-based p-i-p-i-n solar-blind ultraviolet avalanche photodetectors with modulated polarization electric field [J].

Wang, Fuxue ;

Chang, Dongmei ;

Lu, Zhiqiang .

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2020, 33 (06)

[44] Back-illuminated AlGaN-based dual-band solar-blind ultraviolet photodetectors [J].

杨敏 ;

种明 ;

赵德刚 ;

王晓勇 ;

苏艳梅 ;

孙捷 ;

孙秀艳 .

Journal of Semiconductors, 2014, 35 (06) :62-65

[45] PIN solar-blind ultraviolet detectors based on AlGaN [J].

Huang, Lie-Yun ;

Wu, Qiong-Yao ;

Zhao, Wen-Bo ;

Ye, Si-Rong ;

Xiang, Yong-Jun ;

Liu, Xiao-Qin ;

Huang, Shao-Chun .

Bandaoti Guangdian/Semiconductor Optoelectronics, 2007, 28 (03) :342-344

[46] Author Correction: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays [J].

Qing Cai ;

Haifan You ;

Hui Guo ;

Jin Wang ;

Bin Liu ;

Zili Xie ;

Dunjun Chen ;

Hai Lu ;

Youdou Zheng ;

Rong Zhang .

Light: Science & Applications, 10

[47] Growth and fabrication of backside illuminated AlGaN based solar-blind ultraviolet photodetectors on high quality AlN [J].

Jeong, Joocheol ;

Son, Junghwan ;

Jeong, Jiwon ;

Jin, Joo .

UV AND HIGHER ENERGY PHOTONICS: FROM MATERIALS TO APPLICATIONS 2018, 2018, 10727

[48] High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors [J].

Biyikli, N ;

Kimukin, I ;

Kartaloglu, T ;

Aytur, O ;

Ozbay, E .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2314-2317

[49] AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes [J].

Lin, Tingting ;

Liu, Liwei ;

Liu, Xinguo ;

Liu, Chengyu ;

Zhou, Changjian ;

Wang, Wenliang .

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS, 2025, 234 (02) :369-374

[50] Solar-Blind Photodetectors for Harsh Electronics [J].

Dung-Sheng Tsai ;

Wei-Cheng Lien ;

Der-Hsien Lien ;

Kuan-Ming Chen ;

Meng-Lin Tsai ;

Debbie G. Senesky ;

Yueh-Chung Yu ;

Albert P. Pisano ;

Jr-Hau He .

Scientific Reports, 3

← 1 2 3 4 5 →