Avalanche multiplication in AlGaN based solar-blind photodetectors

被引：98

作者：

McClintock, R ^{[1
]}

Yasan, A ^{[1
]}

Minder, K ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

关键词：

D O I：

10.1063/1.2140610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MV/cm. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 50 条

[21] AlGaN-based solar-blind metal-semiconductor-metal photodetectors
Shao Huimin
Zhang Shilin
Xie Sheng
Mao Luhong
Guo WeiLian
Li Xianjie
Yin Shunzheng
Feng Zhihong
Liu Bo
2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2011,
[22] AlGaN solar-blind avalanche photodiodes with AlInN/AlGaN distributed Bragg reflectors
Chujun Yao
Xuanchao Ye
Rui Sun
Guofeng Yang
Jin Wang
Yanan Lu
Pengfei Yan
Jintao Cao
Applied Physics A, 2017, 123
[23] Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices
Chen, Yiren
Zhou, Xingyu
Zhang, Zhiwei
Miao, Guoqing
Jiang, Hong
Li, Zhiming
Song, Hang
MATERIALS LETTERS, 2021, 291
[24] AlGaN-based solar-blind Schottky photodetectors fabricated on AlN/sapphire template
Sang Li-Wen
Qin Zhi-Xin
Cen Long-Bin
Shen Bo
Zhang Guo-Yi
Li Shu-Ping
Chen Hang-Yang
Liu Da-Yi
Kang Jun-Yong
Cheng Cai-Jing
Zhao Hong-Yan
Lu Zheng-Xiong
Ding Jia-Xin
Zhao Lan
Si Jun-Jie
Sun Wei-Guo
CHINESE PHYSICS LETTERS, 2008, 25 (01) : 258 - 261
[25] Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates
Pau, JL
Muñoz, E
Sánchez, MA
Calleja, E
PHOTODETECTOR MATERIALS AND DEVICES VII, 2002, 4650 : 104 - 110
[26] Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Cai, Qing
You, Haifan
Guo, Hui
Wang, Jin
Liu, Bin
Xie, Zili
Chen, Dunjun
Lu, Hai
Zheng, Youdou
Zhang, Rong
LIGHT-SCIENCE & APPLICATIONS, 2021, 10 (01)
[27] Surface Modification of AlGaN Solar-Blind Ultraviolet MSM Photodetectors With Octadecanethiol
Yang, Guofeng
Li, Yuhang
Liu, Yushen
Xie, Feng
Gu, Yan
Yang, Xifeng
Wei, Chulei
Bian, Baoan
Zhang, Xiumei
Lu, Naiyan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 195 - 200
[28] Defect related absorption and emission in AlGaN solar-blind UV photodetectors
Lebedev, V
Cimalla, I
Cimalla, V
Wagner, R
Kaiser, U
Ambacher, O
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 4, 2005, 2 (04): : 1360 - 1365
[29] Back-Illuminated GaN/AlGaN Solar-Blind Avalanche Photodiodes
Dong, Ke Xiu
Wang, Jun
Zhang, Yan Yi
Cheng, Xue Cai
Ou, Mei Ying
IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (03) : 272 - 275
[30] Polarization and p-type doping effects on photoresponse of separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
C. H. Yu
Z. F. Ge
X. Y. Chen
L. Li
X. D. Luo
Optical and Quantum Electronics, 2018, 50

← 1 2 3 4 5 →