Avalanche multiplication in AlGaN based solar-blind photodetectors

被引：98
|
作者：
McClintock, R [1 ]
Yasan, A [1 ]
Minder, K [1 ]
Kung, P [1 ]
Razeghi, M [1 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期
关键词：
D O I：
10.1063/1.2140610
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MV/cm. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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