Avalanche multiplication in AlGaN based solar-blind photodetectors

被引：97

作者：

McClintock, R ^{[1
]}

Yasan, A ^{[1
]}

Minder, K ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 24期

关键词：

D O I：

10.1063/1.2140610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MV/cm. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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