Fermi surface of Bi(111) measured by photoemission spectroscopy -: art. no. 177602

被引:192
作者
Ast, CR [1 ]
Höchst, H [1 ]
机构
[1] Univ Wisconsin, Ctr Synchrotron Radiat, Stoughton, WI 53589 USA
关键词
D O I
10.1103/PhysRevLett.87.177602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Synchrotron radiation angle-resolved photoemission spectroscopy of Bi(111) shows that the Fermi surface consists of six elongated hole pockets along the ($) over bar directions surrounding a ring-shaped electron pocket centered at <(<Gamma>)over bar>, all of which have two-dimensional character. The associated hole and electron sheet densities are p(s) = 1.1 x 10(13) cm(-2) and n(s) 5.5 x 10(12) cm(-2), respectively. A weak emission feature associated with the bulk hole pocket in the Fermi surface was identified. The Fermi momentum of the bulk hole band near the T point is k, = 0.013 +/- 0.003 Angstrom (-1).
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收藏
页码:177602 / 177602
页数:4
相关论文
共 25 条
[1]   TILT OF ELECTRON FERMI SURFACE IN BI [J].
BROWN, RD ;
HARTMAN, RL ;
KOENIG, SH .
PHYSICAL REVIEW, 1968, 172 (03) :598-&
[2]   SEMIMETAL-TO-SEMICONDUCTOR TRANSITION IN BISMUTH THIN-FILMS - COMMENT [J].
CHU, HT .
PHYSICAL REVIEW B, 1995, 51 (08) :5532-5534
[3]   CRYSTAL CHEMISTRY + BAND STRUCTURES OF GROUP V SEMIMETALS + 4-6 SEMICONDUCTORS [J].
COHEN, MH ;
FALICOV, LM ;
GOLIN, S .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (03) :215-&
[4]   ENERGY BANDS IN BISMUTH STRUCTURE .1. A NONELLIPSOIDAL MODEL FOR ELECTRONS IN BI [J].
COHEN, MH .
PHYSICAL REVIEW, 1961, 121 (02) :387-&
[5]   ELECTRONS IN BISMUTH [J].
EDELMAN, VS .
ADVANCES IN PHYSICS, 1976, 25 (06) :555-613
[6]   Hole-majority condition in thin films of semimetal bismuth [J].
Franket, DD ;
Chu, HT .
PHYSICAL REVIEW B, 2000, 61 (19) :13183-13190
[7]   GALVANOMAGNETIC STUDIES OF BISMUTH FILMS IN QUANTUM-SIZE-EFFECT REGION [J].
GARCIA, N ;
STRONGIN, M ;
KAO, YH .
PHYSICAL REVIEW B, 1972, 5 (06) :2029-&
[8]   BAND STRUCTURE OF BISMUTH - PSEUDOPOTENTIAL APPROACH [J].
GOLIN, S .
PHYSICAL REVIEW, 1968, 166 (03) :643-&
[9]   1ST-PRINCIPLES STUDY OF AS, SB, AND BI ELECTRONIC-PROPERTIES [J].
GONZE, X ;
MICHENAUD, JP ;
VIGNERON, JP .
PHYSICAL REVIEW B, 1990, 41 (17) :11827-11836
[10]   Photoemission study of the carrier bands in Bi(111) [J].
Hengsberger, M ;
Segovia, P ;
Garnier, M ;
Purdie, D ;
Baer, Y .
EUROPEAN PHYSICAL JOURNAL B, 2000, 17 (04) :603-608