Blueshifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires

被引：201
作者：
Rao, R
Rao, AM [1 ]
Xu, B
Dong, J
Sharma, S
Sunkara, MK
机构：
[1] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[4] Univ Louisville, Dept Chem Engn, Louisville, KY 40292 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2128044
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Raman spectrum of gallium oxide (beta-Ga2O3) nanowires with [001] growth direction is identical to that of the bulk Ga2O3 [Y. C. Choi Adv. Mater. 12, 746 (2000)] while that of beta-Ga2O3 nanowires with [40 (1) over bar] growth direction is redshifted by 4-23 cm(-1) [Y. H. Gao Appl. Phys. Lett. 81, 2267 (2002)]. Here we report the Raman and Fourier transform infrared spectra of beta-Ga2O3 nanowires with [110] growth direction which is blueshifted relative to the bulk spectra by similar to 10-40 cm(-1). Based on a first principles calculation of the strain dependence of Raman mode frequencies in bulk beta-Ga2O3, we correlate the observed frequency shifts to growth-direction-induced internal strains in the nanowires. (c) 2005 American Institute of Physics.
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