Study of Novel Self-Alignment Method for Silicon Nanowire

被引：1
作者：
Jiang, Yanfeng [1 ]
Zhang, Yamin [1 ]
机构：
[1] N China Univ Technol, Coll Informat Engn, Ctr Microelect, Beijing 100144, Peoples R China
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 12期
关键词：
Silicon Nanowire; Self-Alignment; Temperature Gradient; PERFORMANCE;
D O I：
10.1166/jnn.2011.3973
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A novel phenomenon on silicon nanowire(SiNW) is discussed here, which is related to its self-alignment characteristic when a temperature gradient field appears assisted by electric field. For the SiNW grown by vapor-liquid-solid method, it suffers an alignment force when its two terminals' temperature is different. Experiments about this effect have been observed and it has been anticipated that this property can be used in assembling SiNW array. Furthermore, some explanations on this effect have been made in this paper.
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收藏
页码：10917 / 10921
页数：5
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