Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology

被引：0

作者：

Tu, Chun-Hao ^{[3
]}

Chang, Ting-Chang ^{[1
,2
]}

Liu, Po-Tsun ^{[4
,5
]}

Yang, Che-Yu ^{[3
]}

Feng, Li-Wei ^{[3
]}

Wu, Yung-Chun ^{[6
]}

Sze, Simon M. ^{[3
]}

Chang, Chun-Yen ^{[3
]}

机构：

[1] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Dept Phys, Taichung, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Inst Electroopt Engn, Taichung, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[5] Natl Chiao Tung Univ, Display Inst, Hsinchu, Taiwan

[6] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 10期

关键词：

poly-Si TFTs; fluorine; excimer laser crystallization;

D O I：

10.1016/j.tsf.2007.08.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline silicon thin film transistors (poly-Si TFTs) with the ion implantation of fluorine elements were investigated in this study. The electrical performance and reliability were reported comprehensively. Experimental work has shown the electrical characteristics of excimer laser crystallized F-ions-implanted poly-Si TFTs are improved effectively, especially for field effect mobility. It is also found that the fluorine piled up at the poly-Si interface during thermal annealing, for the TFT fabricated without a prior deposition of pad oxide. The stronger Si-F bonds replace the Si-Si/Si-H, leading to the superior electrical reliability. However, the dose of F ions is critical in poly-Si, or the electrical characteristics of TFT devices will be degraded. (c) 2007 Published by Elsevier B.V.

引用

页码：3128 / 3132

页数：5

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